Output-Stage Design Optimization for High-Sensitivity SiSeRO CCDs and SiSeRO Active Pixel Sensors

Abstract

The Single electron Sensitive Read Out (SiSeRO) technology is a new device class designed to support the needs of future X-ray and optical astronomical telescopes that will require fast, low-noise, megapixel spectro-imagers. Developed at MIT Lincoln Laboratory, in collaboration with Stanford University and MIT, the first generation SiSeRO-CCD (charge-coupled device) prototypes achieved a charge/current conversion gain of 700$-$800 pA per electron, an equivalent noise charge (ENC) of around 3.5 e…